Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

M Benyoucef, M Kuball, B Beaumont, V Bousquet

Research output: Contribution to journalArticle (Academic Journal)peer-review

11 Citations (Scopus)

Abstract

Double epitaxial lateral overgrown (D-ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D-ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.
Translated title of the contributionRaman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates
Original languageEnglish
Pages (from-to)2370 - 2372
Number of pages3
JournalApplied Physics Letters
Volume81
DOIs
Publication statusPublished - Sep 2002

Bibliographical note

Publisher: AIP, Melville, USA

Structured keywords

  • CDTR

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