Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

M Benyoucef; M Kuball; B Beaumont; V Bousquet

doi:10.1063/1.1509860

Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

M Benyoucef
, M Kuball
, B Beaumont
, V Bousquet

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

12 Citations (Scopus)

Abstract

Double epitaxial lateral overgrown (D-ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D-ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

Translated title of the contribution	Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates
Original language	English
Pages (from-to)	2370 - 2372
Number of pages	3
Journal	Applied Physics Letters
Volume	81
DOIs	https://doi.org/10.1063/1.1509860
Publication status	Published - Sept 2002

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Publisher: AIP, Melville, USA

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@article{91e39af9b47a466583326f5616ce79ad,

title = "Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates",

abstract = "Double epitaxial lateral overgrown (D-ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D-ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.",

author = "M Benyoucef and M Kuball and B Beaumont and V Bousquet",

note = "Publisher: AIP, Melville, USA",

year = "2002",

month = sep,

doi = "10.1063/1.1509860",

language = "English",

volume = "81",

pages = "2370 -- 2372",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

AU - Benyoucef, M

AU - Kuball, M

AU - Beaumont, B

AU - Bousquet, V

N1 - Publisher: AIP, Melville, USA

PY - 2002/9

Y1 - 2002/9

N2 - Double epitaxial lateral overgrown (D-ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D-ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

AB - Double epitaxial lateral overgrown (D-ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D-ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

U2 - 10.1063/1.1509860

DO - 10.1063/1.1509860

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 81

SP - 2370

EP - 2372

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

Abstract

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