Translated title of the contribution | Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary |
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Original language | English |
Pages (from-to) | 3656 - 3658 |
Journal | Journal of Applied Physics |
Volume | 90 |
Publication status | Published - 2001 |
Bibliographical note
Publisher: American Institute of PhysicsResearch Groups and Themes
- CDTR