| Translated title of the contribution | Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary |
|---|---|
| Original language | English |
| Pages (from-to) | 3656 - 3658 |
| Journal | Journal of Applied Physics |
| Volume | 90 |
| Publication status | Published - 2001 |
Bibliographical note
Publisher: American Institute of PhysicsResearch Groups and Themes
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