Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

M Benyoucef, M Kuball, B Beaumont, P Gibart

Research output: Contribution to journal › Article (Academic Journal) › peer-review

26 Citations (Scopus)

Translated title of the contribution	Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates
Original language	English
Pages (from-to)	2275 - 2277
Number of pages	3
Journal	Applied Physics Letters
Volume	80(13)
DOIs	https://doi.org/10.1063/1.1464664
Publication status	Published - Apr 2002

Publisher: American Institute of Physics

Research Groups and Themes

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title = "Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates",

author = "M Benyoucef and M Kuball and B Beaumont and P Gibart",

note = "Publisher: American Institute of Physics",

year = "2002",

month = apr,

doi = "10.1063/1.1464664",

language = "English",

volume = "80(13)",

pages = "2275 -- 2277",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

AU - Benyoucef, M

AU - Kuball, M

AU - Beaumont, B

AU - Gibart, P

N1 - Publisher: American Institute of Physics

PY - 2002/4

Y1 - 2002/4

U2 - 10.1063/1.1464664

DO - 10.1063/1.1464664

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 80(13)

SP - 2275

EP - 2277

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -