Raman scattering in InN films and nanostsructures

C Pinquier, F Demangeot, J Frandon, O Briot, B Maleyre, S Ruffenach, B Gil, JW Pomeroy, M Kuball, H Hubel, N van Uden, D Dunstan

Research output: Contribution to journalArticle (Academic Journal)peer-review

2 Citations (Scopus)

Abstract

Studies of lattice dynamics devoted to wurtzite InN are presented. Raman scattering experiments on both InN thin films and nanometric islands grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) were performed at room temperature. From the Raman spectra recorded from InN films under hydrostatic pressure up to 13 GPa, linear pressure coefficients and the corresponding Gruneisen parameters for both E-2 and A(1) (LO) phonons were extracted for the wurtzite structure up to 11 GPa, close to the starting pressure of the hexagonal to rock-salt phase transition of InN. Spectra at higher pressure suggest that InN undergoes a gradual phase transition, and the reverse transition exhibits a strong hysteresis effect during the downstroke. Then, we discuss recent results on large single InN islands grown on GaN buffer layers, obtained by spatially resolved micro-Raman measurements. The magnitude of the residual strain is estimated, using a recent determination of phonon deformation potentials. It is found to vary linearly as a function of island height.
Translated title of the contributionRaman scattering in InN films and nanostsructures
Original languageEnglish
Pages (from-to)581 - 589
Number of pages9
JournalSuperlattice Microstruct
Volume36 (4-6)
Publication statusPublished - 2004

Bibliographical note

Publisher: Academic Press Ltd, Elsevier Science Ltd

Structured keywords

  • CDTR

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