Raman scattering, photoluminescence and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

M Benyoucef, MHH Kuball, DD Koleske, AE Wickenden, RL Henry, M Fatemi, ME Twigg

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Translated title of the contribution	Raman scattering, photoluminescence and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates
Original language	English
Pages (from-to)	15 - 18
Journal	Materials Science and Engineering: B
Volume	93
Publication status	Published - 2002

Publisher: Elsevier Science

Research Groups and Themes

@article{0ed06663b01f48aebf443128c5244b95,

title = "Raman scattering, photoluminescence and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates",

author = "M Benyoucef and MHH Kuball and DD Koleske and AE Wickenden and RL Henry and M Fatemi and ME Twigg",

note = "Publisher: Elsevier Science",

year = "2002",

language = "English",

volume = "93",

pages = "15 -- 18",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Sequoia",

}

TY - JOUR

T1 - Raman scattering, photoluminescence and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

AU - Benyoucef, M

AU - Kuball, MHH

AU - Koleske, DD

AU - Wickenden, AE

AU - Henry, RL

AU - Fatemi, M

AU - Twigg, ME

N1 - Publisher: Elsevier Science

PY - 2002

Y1 - 2002

M3 - Article (Academic Journal)

SN - 0921-5107

VL - 93

SP - 15

EP - 18

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

ER -