Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation

Alexander J. Leide, Matthew J. Lloyd, Richard I. Todd, David E. J. Armstrong

Research output: Contribution to journalArticle (Academic Journal)

Abstract

Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acquiring Raman spectra shows rapid recovery of Si-C bonding, but not a complete recovery of the unirradiated structure. Annealing irradiated SiC causes surface oxidation where unirradiated SiC does not oxidise. Comparisons are made to the apparent radiation resistance of diamond and silicon which have similar crystal structures, but are monatomic, leading to the suggestion that chemical defects are responsible for increased radiation damage in SiC.
Original languageEnglish
JournalarXiv
Publication statusSubmitted - 1 Jul 2020

Bibliographical note

24 pages, 8 figures

Keywords

  • cond-mat.mtrl-sci

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    Leide, A. J., Lloyd, M. J., Todd, R. I., & Armstrong, D. E. J. (2020). Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation. Manuscript submitted for publication.