Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs

J. W. Pomeroy, C. Middleton, M. Singh, S. Dalcanale, M. J. Uren, M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, M. Kuball*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

19 Citations (Scopus)

Abstract

β-Ga2O3 is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in β-Ga2O3 MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was 88mm·K/W. This value is higher than what has been previously reported using electrical methods, which determine an average temperature over the whole device area. Experimentally validated thermal simulations have been used to propose possible thermal management mitigation approaches.

Original languageEnglish
Article number8581472
Pages (from-to)189-192
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number2
Early online date19 Dec 2018
DOIs
Publication statusPublished - 1 Feb 2019

Structured keywords

  • CDTR

Keywords

  • MOSFET
  • RF
  • self-heating
  • simulation
  • thermography
  • β-GaO

Fingerprint Dive into the research topics of 'Raman Thermography of Peak Channel Temperature in β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs'. Together they form a unique fingerprint.

Cite this