Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs

J. W. Pomeroy; C. Middleton; M. Singh; S. Dalcanale; M. J. Uren; M. H. Wong; K. Sasaki; A. Kuramata; S. Yamakoshi; M. Higashiwaki; M. Kuball

doi:10.1109/LED.2018.2887278

Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs

J. W. Pomeroy, C. Middleton, M. Singh, S. Dalcanale, M. J. Uren, M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, M. Kuball^*

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

62 Citations (Scopus)

Abstract

β-Ga₂O₃ is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in β-Ga₂O₃ MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was 88mm·K/W. This value is higher than what has been previously reported using electrical methods, which determine an average temperature over the whole device area. Experimentally validated thermal simulations have been used to propose possible thermal management mitigation approaches.

Original language	English
Article number	8581472
Pages (from-to)	189-192
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	2
Early online date	19 Dec 2018
DOIs	https://doi.org/10.1109/LED.2018.2887278
Publication status	Published - 1 Feb 2019

Research Groups and Themes

CDTR

Keywords

MOSFET
RF
self-heating
simulation
thermography
β-GaO

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10.1109/LED.2018.2887278

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Cite this

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title = "Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs",

abstract = "β-Ga2O3 is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in β-Ga2O3 MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was 88mm·K/W. This value is higher than what has been previously reported using electrical methods, which determine an average temperature over the whole device area. Experimentally validated thermal simulations have been used to propose possible thermal management mitigation approaches.",

keywords = "MOSFET, RF, self-heating, simulation, thermography, β-GaO",

author = "Pomeroy, {J. W.} and C. Middleton and M. Singh and S. Dalcanale and Uren, {M. J.} and Wong, {M. H.} and K. Sasaki and A. Kuramata and S. Yamakoshi and M. Higashiwaki and M. Kuball",

year = "2019",

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doi = "10.1109/LED.2018.2887278",

language = "English",

volume = "40",

pages = "189--192",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "2",

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TY - JOUR

T1 - Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs

AU - Pomeroy, J. W.

AU - Middleton, C.

AU - Singh, M.

AU - Dalcanale, S.

AU - Uren, M. J.

AU - Wong, M. H.

AU - Sasaki, K.

AU - Kuramata, A.

AU - Yamakoshi, S.

AU - Higashiwaki, M.

AU - Kuball, M.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - β-Ga2O3 is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in β-Ga2O3 MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was 88mm·K/W. This value is higher than what has been previously reported using electrical methods, which determine an average temperature over the whole device area. Experimentally validated thermal simulations have been used to propose possible thermal management mitigation approaches.

AB - β-Ga2O3 is an attractive material for high-voltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nano-particle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in β-Ga2O3 MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was 88mm·K/W. This value is higher than what has been previously reported using electrical methods, which determine an average temperature over the whole device area. Experimentally validated thermal simulations have been used to propose possible thermal management mitigation approaches.

KW - MOSFET

KW - RF

KW - self-heating

KW - simulation

KW - thermography

KW - β-GaO

UR - http://www.scopus.com/inward/record.url?scp=85058884949&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2887278

DO - 10.1109/LED.2018.2887278

M3 - Article (Academic Journal)

AN - SCOPUS:85058884949

SN - 0741-3106

VL - 40

SP - 189

EP - 192

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 8581472

ER -

Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs

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High Performance Buffers for RF GaN Electronics

Professor Martin H H Kuball

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Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs

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Raman Thermography of Peak Channel Temperature in β-Ga₂O₃ MOSFETs