Abstract
Reducing GaN-on-diamond interfacial thermal resistance is crucial to maximize the thermal benefit of diamond substrates for high power transistor applications. In this work, we demonstrate a rapid, contactless transient thermoreflectance technique to assess the interfacial thermal resistance of as-grown GaN-on-diamond wafers.
Original language | English |
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Title of host publication | Proceedings of 2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) |
Subtitle of host publication | May 18th - 21st, 2015, Scottsdale, Arizona, USA |
Publisher | CS Mantech |
Pages | 151-153 |
Number of pages | 3 |
Publication status | Published - May 2015 |
Event | 2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) - Arizona, Scottsdale, United States Duration: 18 May 2015 → 21 May 2015 |
Conference
Conference | 2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) |
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Country/Territory | United States |
City | Scottsdale |
Period | 18/05/15 → 21/05/15 |
Structured keywords
- CDTR
Keywords
- GaN-on-diamond
- TBReff
- Transient thermoreflectance