Rapid Co-Optimisation of Turn-On and Turn-Off Gate Resistor Values in DC:DC Power Converters

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Abstract

Both turn-on and turn-off gate resistance for switched power devices can significantly impact system EMI, switching loss, and device longevity. To determine the optimum resistor values, an exhaustive search through m different turn-on values and n different turn-off values would require m×n tests. This paper demonstrates a method that separates this process into m+n−1 experimental tests, followed by analysis of measured losses and time-domain waveforms in MATLAB. The methods allow loss and waveform spectral content to be highly accurately predicted for any of the possible m×n resistor combinations. Losses are predicted using 2D curve fitting, whilst automated edge-extraction and splicing is used on the time-domain waveforms for subsequent spectral analysis. Significant time savings are delivered through the reduction of repeated reworking to swap gate resistances, reconnection to test equipment, and the waiting for the converter to reach thermal steady state. All of the MATLAB code is made freely available to readers.
Original languageEnglish
Title of host publication2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages5357-5364
Number of pages8
ISBN (Print)9781479973132
DOIs
Publication statusE-pub ahead of print - 6 Dec 2018

Publication series

Name
ISSN (Print)2329-3721
ISSN (Electronic)2329-3748

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Keywords

  • Edge Detection
  • Edge Extraction
  • Waveform Splicing
  • Waveform Reconstruction
  • Gate Resistor Optimisation

Cite this

Dymond, H., Dalton, J., & Stark, B. H. (2018). Rapid Co-Optimisation of Turn-On and Turn-Off Gate Resistor Values in DC:DC Power Converters. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018) (pp. 5357-5364). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ECCE.2018.8558406