| Translated title of the contribution | Reduced threshold current in InGaN MQW laser diodes using deeply-etched lamda/4 air/nitride distributed Bragg reflectors defined by focussed ion beam etching |
|---|---|
| Original language | English |
| Title of host publication | UK Nitride Consortium Meeting, Bristol, UK |
| Publication status | Published - Sept 2000 |
Research Groups and Themes
- Photonics and Quantum
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