Abstract
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.
Translated title of the contribution | Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers |
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Original language | English |
Pages (from-to) | 103 - 106 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2009 |
Research Groups and Themes
- CDTR