Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

G.J Riedel, J.W Pomeroy, K.P Hilton, J.O Maclean, D.J Wallis, M.J Uren, T Martin, U Forsberg, A Lunskog, A Kakanakova-Georgieva, G Pozina, E Janzen, R Lossy, R Pazirandeh, F Brunner, J Wurfl, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

54 Citations (Scopus)

Abstract

Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.
Translated title of the contributionReducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
Original languageEnglish
Pages (from-to)103 - 106
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number2
DOIs
Publication statusPublished - Feb 2009

Structured keywords

  • CDTR

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