Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

G.J Riedel; J.W Pomeroy; K.P Hilton; J.O Maclean; D.J Wallis; M.J Uren; T Martin; U Forsberg; A Lunskog; A Kakanakova-Georgieva; G Pozina; E Janzen; R Lossy; R Pazirandeh; F Brunner; J Wurfl; M Kuball

doi:10.1109/LED.2008.2010340

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

G.J Riedel, J.W Pomeroy, K.P Hilton, J.O Maclean, D.J Wallis, M.J Uren, T Martin, U Forsberg, A Lunskog, A Kakanakova-Georgieva, G Pozina, E Janzen, R Lossy, R Pazirandeh, F Brunner, J Wurfl, M Kuball

School of Physics

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70 Citations (Scopus)

Abstract

Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

Translated title of the contribution	Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
Original language	English
Pages (from-to)	103 - 106
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/LED.2008.2010340
Publication status	Published - Feb 2009

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Riedel, G. J., Pomeroy, J. W., Hilton, K. P., Maclean, J. O., Wallis, D. J., Uren, M. J., Martin, T., Forsberg, U., Lunskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J., & Kuball, M. (2009). Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers. IEEE Electron Device Letters, 30(2), 103 - 106. https://doi.org/10.1109/LED.2008.2010340

@article{cc592e81fa7e4ce7bb8a4de595c1dac7,

title = "Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers",

abstract = "Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.",

author = "G.J Riedel and J.W Pomeroy and K.P Hilton and J.O Maclean and D.J Wallis and M.J Uren and T Martin and U Forsberg and A Lunskog and A Kakanakova-Georgieva and G Pozina and E Janzen and R Lossy and R Pazirandeh and F Brunner and J Wurfl and M Kuball",

year = "2009",

month = feb,

doi = "10.1109/LED.2008.2010340",

language = "English",

volume = "30",

pages = "103 -- 106",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "2",

}

Riedel, GJ, Pomeroy, JW, Hilton, KP, Maclean, JO, Wallis, DJ, Uren, MJ, Martin, T, Forsberg, U, Lunskog, A, Kakanakova-Georgieva, A, Pozina, G, Janzen, E, Lossy, R, Pazirandeh, R, Brunner, F, Wurfl, J & Kuball, M 2009, 'Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers', IEEE Electron Device Letters, vol. 30, no. 2, pp. 103 - 106. https://doi.org/10.1109/LED.2008.2010340

TY - JOUR

T1 - Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

AU - Riedel, G.J

AU - Pomeroy, J.W

AU - Hilton, K.P

AU - Maclean, J.O

AU - Wallis, D.J

AU - Uren, M.J

AU - Martin, T

AU - Forsberg, U

AU - Lunskog, A

AU - Kakanakova-Georgieva, A

AU - Pozina, G

AU - Janzen, E

AU - Lossy, R

AU - Pazirandeh, R

AU - Brunner, F

AU - Wurfl, J

AU - Kuball, M

PY - 2009/2

Y1 - 2009/2

N2 - Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

AB - Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

U2 - 10.1109/LED.2008.2010340

DO - 10.1109/LED.2008.2010340

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 30

SP - 103

EP - 106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

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