Reduction of threading dislocations in epitaxial ZnO films grown on sapphire (0001)

Y Sun, D. Cherns, Peter J Heard, R. P. Doherty, Ye Sun, M. N. R. Ashfold

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

Transmission electron microscopy was used to investigate epitaxial ZnO films on c-sapphire, produced by a two-step method. Firstly, pulsed laser deposition provided a continuous buffer ZnO, with thickness about 80 nm and a predominant alignment of (0001)(ZnO)//(0001)(sapphire) and [11-20](ZnO)//[10-10](sapphire). On the top of buffer layer there was a high density of c-aligned nanorods, which revealed few, if any, threading dislocations (TDs), in contrast with the buffer layer where TD density was about 10(11)/cm(2). Subsequent treatments by either chemical vapour deposition or hydrothermal growth caused the nanorods to grow laterally and form continuous films. Subgrain boundary dislocations were generated as nanorods coalesced, but these new TDs were also annihilated in dislocation reactions, giving to a substantial reduction ill the total TD density.

Translated title of the contributionReduction of threading dislocations in epitaxial ZnO films grown on sapphire (0001)
Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials XV, Cambridge, UK
EditorsAG Cullis, PA Midgley
Place of PublicationBERLIN
PublisherSpringer-Verlag Berlin
Pages127-130
Number of pages4
ISBN (Print)978-1-4020-8614-4
Publication statusPublished - 2007
Event15th Conference on Microscopy of Semiconducting Materials - Cambridge, United Kingdom
Duration: 2 Apr 20075 Apr 2007

Conference

Conference15th Conference on Microscopy of Semiconducting Materials
CountryUnited Kingdom
CityCambridge
Period2/04/075/04/07

Bibliographical note

Conference Organiser: Institute of Physics

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