Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Ben Rackauskas; Michael Uren; Tetsu Kachi; Martin Kuball

doi:10.1016/j.microrel.2019.02.013

Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Ben Rackauskas^*, Michael Uren, Tetsu Kachi, Martin Kuball

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

11 Citations (Scopus)

350 Downloads (Pure)

Abstract

This work presents the first lifetime estimation of vertical GaN-on-GaN pn diodes using a step stress measurement technique with analysis not previously applied to GaN. The failure mechanism is surface breakdown, indicating that the lifetime is not yet limited by intrinsic material properties but by device design. As such, the mean time to failure depends on the peripheral length of the device. An estimated operating MTTF of 10 years at a reverse bias stress of 260 V was calculated for a 126 μm diameter diode.

Original language	English
Pages (from-to)	48-51
Number of pages	4
Journal	Microelectronics Reliability
Volume	95
Early online date	6 Mar 2019
DOIs	https://doi.org/10.1016/j.microrel.2019.02.013
Publication status	Published - Apr 2019

Research Groups and Themes

CDTR

Keywords

GaN-on-GaN
Lifetime
MTTF
Reliability
Vertical pn diode

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10.1016/j.microrel.2019.02.013

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This is the final published version of the article (version of record). It first appeared online via Elsevier at https://www.sciencedirect.com/science/article/pii/S0026271418309727 . Please refer to any applicable terms of use of the publisher.
Final published version, 998 KBLicence: CC BY

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title = "Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes",

abstract = "This work presents the first lifetime estimation of vertical GaN-on-GaN pn diodes using a step stress measurement technique with analysis not previously applied to GaN. The failure mechanism is surface breakdown, indicating that the lifetime is not yet limited by intrinsic material properties but by device design. As such, the mean time to failure depends on the peripheral length of the device. An estimated operating MTTF of 10 years at a reverse bias stress of 260 V was calculated for a 126 μm diameter diode.",

keywords = "GaN-on-GaN, Lifetime, MTTF, Reliability, Vertical pn diode",

author = "Ben Rackauskas and Michael Uren and Tetsu Kachi and Martin Kuball",

year = "2019",

month = apr,

doi = "10.1016/j.microrel.2019.02.013",

language = "English",

volume = "95",

pages = "48--51",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

}

TY - JOUR

T1 - Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

AU - Rackauskas, Ben

AU - Uren, Michael

AU - Kachi, Tetsu

AU - Kuball, Martin

PY - 2019/4

Y1 - 2019/4

N2 - This work presents the first lifetime estimation of vertical GaN-on-GaN pn diodes using a step stress measurement technique with analysis not previously applied to GaN. The failure mechanism is surface breakdown, indicating that the lifetime is not yet limited by intrinsic material properties but by device design. As such, the mean time to failure depends on the peripheral length of the device. An estimated operating MTTF of 10 years at a reverse bias stress of 260 V was calculated for a 126 μm diameter diode.

AB - This work presents the first lifetime estimation of vertical GaN-on-GaN pn diodes using a step stress measurement technique with analysis not previously applied to GaN. The failure mechanism is surface breakdown, indicating that the lifetime is not yet limited by intrinsic material properties but by device design. As such, the mean time to failure depends on the peripheral length of the device. An estimated operating MTTF of 10 years at a reverse bias stress of 260 V was calculated for a 126 μm diameter diode.

KW - GaN-on-GaN

KW - Lifetime

KW - MTTF

KW - Reliability

KW - Vertical pn diode

UR - http://www.scopus.com/inward/record.url?scp=85062389052&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2019.02.013

DO - 10.1016/j.microrel.2019.02.013

M3 - Article (Academic Journal)

AN - SCOPUS:85062389052

SN - 0026-2714

VL - 95

SP - 48

EP - 51

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Abstract

Research Groups and Themes

Keywords

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ECCI proposal

High Performance Buffers for RF GaN Electronics

B. Rackauskas et at. MER 2019

Cite this

Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Abstract

Research Groups and Themes

Keywords

Access to Document

Handle.net

Other files and links

Fingerprint

Projects

ECCI proposal

High Performance Buffers for RF GaN Electronics

Datasets

B. Rackauskas et at. MER 2019

Cite this