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Abstract
This work presents the first lifetime estimation of vertical GaN-on-GaN pn diodes using a step stress measurement technique with analysis not previously applied to GaN. The failure mechanism is surface breakdown, indicating that the lifetime is not yet limited by intrinsic material properties but by device design. As such, the mean time to failure depends on the peripheral length of the device. An estimated operating MTTF of 10 years at a reverse bias stress of 260 V was calculated for a 126 μm diameter diode.
Original language | English |
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Pages (from-to) | 48-51 |
Number of pages | 4 |
Journal | Microelectronics Reliability |
Volume | 95 |
Early online date | 6 Mar 2019 |
DOIs | |
Publication status | Published - Apr 2019 |
Structured keywords
- CDTR
Keywords
- GaN-on-GaN
- Lifetime
- MTTF
- Reliability
- Vertical pn diode
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Dive into the research topics of 'Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes'. Together they form a unique fingerprint.Projects
- 2 Finished
Datasets
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B. Rackauskas et at. MER 2019
Pomeroy, J. W. (Creator), Rackauskas, B. (Creator) & Kuball, M. H. H. (Data Manager), University of Bristol, 1 Mar 2019
DOI: 10.5523/bris.7qywrneti4ig2j2png6cvpf3m, http://data.bris.ac.uk/data/dataset/7qywrneti4ig2j2png6cvpf3m
Dataset