Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

N. Killat; M. Montes Bajo; T. Paskova; K. R. Evans; J. Leach; X. Li; Ue Oezguer; H. Morkoc; K. D. Chabak; A. Crespo; J. K. Gillespie; R. Fitch; M. Kossler; D. E. Walker; M. Trejo; G. D. Via; J. D. Blevins; M. Kuball

doi:10.1063/1.4829062

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

N. Killat^*, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ue Oezguer, H. Morkoc, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

24 Citations (Scopus)

Abstract

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps. (C) 2013 AIP Publishing LLC.

Original language	English
Article number	193507
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4829062
Publication status	Published - 4 Nov 2013

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Novel Thermal Management Concepts: High Power High Frequency Planar Gunn Diodes
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Killat, N., Montes Bajo, M., Paskova, T., Evans, K. R., Leach, J., Li, X., Oezguer, U., Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., & Kuball, M. (2013). Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters, 103(19), Article 193507. https://doi.org/10.1063/1.4829062

@article{7d1746e15cd64f2c8cad5a6d3a2a1742,

title = "Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges",

abstract = "To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps. (C) 2013 AIP Publishing LLC.",

keywords = "GROWTH",

author = "N. Killat and {Montes Bajo}, M. and T. Paskova and Evans, {K. R.} and J. Leach and X. Li and Ue Oezguer and H. Morkoc and Chabak, {K. D.} and A. Crespo and Gillespie, {J. K.} and R. Fitch and M. Kossler and Walker, {D. E.} and M. Trejo and Via, {G. D.} and Blevins, {J. D.} and M. Kuball",

year = "2013",

month = nov,

day = "4",

doi = "10.1063/1.4829062",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "19",

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Killat, N, Montes Bajo, M, Paskova, T, Evans, KR, Leach, J, Li, X, Oezguer, U, Morkoc, H, Chabak, KD, Crespo, A, Gillespie, JK, Fitch, R, Kossler, M, Walker, DE, Trejo, M, Via, GD, Blevins, JD & Kuball, M 2013, 'Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges', Applied Physics Letters, vol. 103, no. 19, 193507. https://doi.org/10.1063/1.4829062

TY - JOUR

T1 - Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate

T2 - Implications of surface step edges

AU - Killat, N.

AU - Montes Bajo, M.

AU - Paskova, T.

AU - Evans, K. R.

AU - Leach, J.

AU - Li, X.

AU - Oezguer, Ue

AU - Morkoc, H.

AU - Chabak, K. D.

AU - Crespo, A.

AU - Gillespie, J. K.

AU - Fitch, R.

AU - Kossler, M.

AU - Walker, D. E.

AU - Trejo, M.

AU - Via, G. D.

AU - Blevins, J. D.

AU - Kuball, M.

PY - 2013/11/4

Y1 - 2013/11/4

N2 - To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps. (C) 2013 AIP Publishing LLC.

AB - To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps. (C) 2013 AIP Publishing LLC.

KW - GROWTH

U2 - 10.1063/1.4829062

DO - 10.1063/1.4829062

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193507

ER -

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

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