Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

N. Killat*, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ue Oezguer, H. Morkoc, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

20 Citations (Scopus)

Abstract

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps. (C) 2013 AIP Publishing LLC.

Original languageEnglish
Article number193507
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number19
DOIs
Publication statusPublished - 4 Nov 2013

Structured keywords

  • CDTR

Keywords

  • GROWTH

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