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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

N. Killat*, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ue Oezguer, H. Morkoc, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball

*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

25 Citations (Scopus)

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