Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

Maire Power, James W. Pomeroy, Indranil Chatterjee, Dilip M. Risbud, Barry Wynne, Mark A. Gajda, Jan Sonsky, Kenneth D. Pedrotti, Michael J. Uren, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of-250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at-400 V in a high voltage DC-DC boost converter circuit. Continuous operation of the SBD under this stress cycling condition may lead to cracking of the GaN layer and in turn degradation of the device, which may pose a reliability concern in such boost converter circuits.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Power Semiconductor Devices and ICs
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages103-106
Number of pages4
Volume2016-July
ISBN (Print)9781467387682
DOIs
Publication statusPublished - 25 Jul 2016
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: 12 Jun 201616 Jun 2016

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period12/06/1616/06/16

Structured keywords

  • CDTR

Keywords

  • AlGaN/GaN Schottky Barrier Diode
  • DC-DC boost converter
  • micro-Raman spectroscopy
  • piezoelectric stress

Fingerprint Dive into the research topics of 'Reverse-biased induced mechanical stress in AlGaN/GaN power diodes'. Together they form a unique fingerprint.

Cite this