Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

Maire Power; James W. Pomeroy; Indranil Chatterjee; Dilip M. Risbud; Barry Wynne; Mark A. Gajda; Jan Sonsky; Kenneth D. Pedrotti; Michael J. Uren; Martin Kuball

doi:10.1109/ISPSD.2016.7520788

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

Maire Power, James W. Pomeroy, Indranil Chatterjee, Dilip M. Risbud, Barry Wynne, Mark A. Gajda, Jan Sonsky, Kenneth D. Pedrotti, Michael J. Uren, Martin Kuball

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of-250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at-400 V in a high voltage DC-DC boost converter circuit. Continuous operation of the SBD under this stress cycling condition may lead to cracking of the GaN layer and in turn degradation of the device, which may pose a reliability concern in such boost converter circuits.

Original language	English
Title of host publication	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	103-106
Number of pages	4
Volume	2016-July
ISBN (Print)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520788
Publication status	Published - 25 Jul 2016
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 12 Jun 2016 → 16 Jun 2016

Conference

Conference	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country	Czech Republic
City	Prague
Period	12/06/16 → 16/06/16

Structured keywords

CDTR

Keywords

AlGaN/GaN Schottky Barrier Diode
DC-DC boost converter
micro-Raman spectroscopy
piezoelectric stress

Access to Document

10.1109/ISPSD.2016.7520788

Link to publication in Scopus

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Cite this

Power, M., Pomeroy, J. W., Chatterjee, I., Risbud, D. M., Wynne, B., Gajda, M. A., Sonsky, J., Pedrotti, K. D., Uren, M. J., & Kuball, M. (2016). Reverse-biased induced mechanical stress in AlGaN/GaN power diodes. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (Vol. 2016-July, pp. 103-106). [7520788] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ISPSD.2016.7520788

Power, Maire ; Pomeroy, James W. ; Chatterjee, Indranil ; Risbud, Dilip M. ; Wynne, Barry ; Gajda, Mark A. ; Sonsky, Jan ; Pedrotti, Kenneth D. ; Uren, Michael J. ; Kuball, Martin. / Reverse-biased induced mechanical stress in AlGaN/GaN power diodes. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Vol. 2016-July Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 103-106

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title = "Reverse-biased induced mechanical stress in AlGaN/GaN power diodes",

abstract = "The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of-250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at-400 V in a high voltage DC-DC boost converter circuit. Continuous operation of the SBD under this stress cycling condition may lead to cracking of the GaN layer and in turn degradation of the device, which may pose a reliability concern in such boost converter circuits.",

keywords = "AlGaN/GaN Schottky Barrier Diode, DC-DC boost converter, micro-Raman spectroscopy, piezoelectric stress",

author = "Maire Power and Pomeroy, {James W.} and Indranil Chatterjee and Risbud, {Dilip M.} and Barry Wynne and Gajda, {Mark A.} and Jan Sonsky and Pedrotti, {Kenneth D.} and Uren, {Michael J.} and Martin Kuball",

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doi = "10.1109/ISPSD.2016.7520788",

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Power, M, Pomeroy, JW, Chatterjee, I, Risbud, DM, Wynne, B, Gajda, MA, Sonsky, J, Pedrotti, KD, Uren, MJ & Kuball, M 2016, Reverse-biased induced mechanical stress in AlGaN/GaN power diodes. in Proceedings of the International Symposium on Power Semiconductor Devices and ICs. vol. 2016-July, 7520788, Institute of Electrical and Electronics Engineers (IEEE), pp. 103-106, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 12/06/16. https://doi.org/10.1109/ISPSD.2016.7520788

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes. / Power, Maire; Pomeroy, James W.; Chatterjee, Indranil; Risbud, Dilip M.; Wynne, Barry; Gajda, Mark A.; Sonsky, Jan; Pedrotti, Kenneth D.; Uren, Michael J.; Kuball, Martin.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Vol. 2016-July Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 103-106 7520788.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

AU - Power, Maire

AU - Pomeroy, James W.

AU - Chatterjee, Indranil

AU - Risbud, Dilip M.

AU - Wynne, Barry

AU - Gajda, Mark A.

AU - Sonsky, Jan

AU - Pedrotti, Kenneth D.

AU - Uren, Michael J.

AU - Kuball, Martin

PY - 2016/7/25

Y1 - 2016/7/25

N2 - The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of-250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at-400 V in a high voltage DC-DC boost converter circuit. Continuous operation of the SBD under this stress cycling condition may lead to cracking of the GaN layer and in turn degradation of the device, which may pose a reliability concern in such boost converter circuits.

AB - The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of-250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at-400 V in a high voltage DC-DC boost converter circuit. Continuous operation of the SBD under this stress cycling condition may lead to cracking of the GaN layer and in turn degradation of the device, which may pose a reliability concern in such boost converter circuits.

KW - AlGaN/GaN Schottky Barrier Diode

KW - DC-DC boost converter

KW - micro-Raman spectroscopy

KW - piezoelectric stress

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SN - 9781467387682

VL - 2016-July

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BT - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016

Y2 - 12 June 2016 through 16 June 2016

ER -