RF power silicon-on-glass VDMOSFETs

N Nenadovic*, [No Value] Cuoco, SJCH Theeuwen, H Schellevis, G Spierings, A Griffo, M Pelk, LK Nanver, RFF Jos, JW Slotboom

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

18 Citations (Scopus)

Abstract

Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 pm and gate width of 350 mum, the measured f(T)/f(max) is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ - 70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.

Original languageEnglish
Pages (from-to)424-426
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number6
DOIs
Publication statusPublished - Jun 2004

Keywords

  • substrate transfer
  • silicon-on-glass (SOG)
  • vertical double-diffused MOSFETs (VDMOSFET)
  • silicon RF power MOSFETs
  • self-heating

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