Robustness of Basal-Plane Antiferromagnetic Order and the J(eff)=1/2 State in Single-Layer Iridate Spin-Orbit Mott Insulators

S. Boseggia*, R. Springell, H. C. Walker, H. M. Ronnow, Ch. Rueegg, H. Okabe, M. Isobe, R. S. Perry, S. P. Collins, D. F. McMorrow

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

108 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Robustness of Basal-Plane Antiferromagnetic Order and the J(eff)=1/2 State in Single-Layer Iridate Spin-Orbit Mott Insulators'. Together they form a unique fingerprint.

Chemistry

Physics