Room-temperature direct bonding of diamond and Al

Jianbo Liang*, Shoji Yamajo, Martin Kuball, Naoteru Shigekawa

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

7 Citations (Scopus)

Abstract

Direct bonding of diamond and Al is achieved by surface activated bonding at room temperature. The interfacial structures of the diamond/Al bonding interface with annealing at different temperatures are investigated under in-situ annealing in a transmission electron microscope (TEM). An amorphous layer with a thickness of 4 ± 0.5 nm is formed at the bonding interface without annealing, the thickness of the amorphous layer decreases with increasing annealing temperature, the amorphous layer vanished after annealing at 600 °C. No structural defects are observed at the bonding interface with annealing at different temperatures.

Original languageEnglish
Pages (from-to)58-61
Number of pages4
JournalScripta Materialia
Volume159
Early online date14 Sep 2018
DOIs
Publication statusPublished - 15 Jan 2019

Structured keywords

  • CDTR

Keywords

  • Amorphous layer
  • Bonding interface
  • Diamond/Al direct bonding
  • Surface activated bonding

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