Selective area growth of β-Ga2O3

Arpit Nandi; Indraneel Sanyal; Martin Kuball

Selective area growth of β-Ga₂O₃

Arpit Nandi, Indraneel Sanyal, Martin Kuball

School of Physics

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

Selective area growth (SAG) is emerging as an innovative method to fabricate complex 3D device structures. It has potential to achieve edge termination, faceted structures, to name a few. Here, SAG of β-Ga₂O₃ using metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire followed by HF lift-off was demonstrated. Post-HF etching combined with ultrasonication achieved complete removal of the mask and expose the regrown pattern. An (Al_xGa1_-x)₂O₃ capping layer is found to be highly effective in reducing the etching damage of the surface during the manufacturing process.

Original language	English
Number of pages	3
Publication status	Published - 2023
Event	2023 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2023 - Orlando, FL, United States - Orlando, United States Duration: 15 May 2023 → 18 May 2023 https://csmantech.org/

Conference

Conference	2023 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2023 - Orlando, FL, United States
Abbreviated title	CS MANTECH 2023
Country/Territory	United States
City	Orlando
Period	15/05/23 → 18/05/23
Internet address	https://csmantech.org/

Research Groups and Themes

CDTR

Access to Document

https://csmantech.org/wp-content/uploads/2023/06/15.2.2023_SAG-of-Ga2O3_Arpit-Nandi_CDTR-W_Rev1.pdf

Handle.net

Persistent link

Cite this

@conference{64f8ff3c5f3e4b0aaa11f6c3361b8068,

title = "Selective area growth of β-Ga2O3",

abstract = "Selective area growth (SAG) is emerging as an innovative method to fabricate complex 3D device structures. It has potential to achieve edge termination, faceted structures, to name a few. Here, SAG of β-Ga2O3 using metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire followed by HF lift-off was demonstrated. Post-HF etching combined with ultrasonication achieved complete removal of the mask and expose the regrown pattern. An (AlxGa1-x)2O3 capping layer is found to be highly effective in reducing the etching damage of the surface during the manufacturing process.",

author = "Arpit Nandi and Indraneel Sanyal and Martin Kuball",

year = "2023",

language = "English",

note = "2023 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2023 - Orlando, FL, United States, CS MANTECH 2023 ; Conference date: 15-05-2023 Through 18-05-2023",

url = "https://csmantech.org/",

}

TY - CONF

T1 - Selective area growth of β-Ga2O3

AU - Nandi, Arpit

AU - Sanyal, Indraneel

AU - Kuball, Martin

PY - 2023

Y1 - 2023

N2 - Selective area growth (SAG) is emerging as an innovative method to fabricate complex 3D device structures. It has potential to achieve edge termination, faceted structures, to name a few. Here, SAG of β-Ga2O3 using metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire followed by HF lift-off was demonstrated. Post-HF etching combined with ultrasonication achieved complete removal of the mask and expose the regrown pattern. An (AlxGa1-x)2O3 capping layer is found to be highly effective in reducing the etching damage of the surface during the manufacturing process.

AB - Selective area growth (SAG) is emerging as an innovative method to fabricate complex 3D device structures. It has potential to achieve edge termination, faceted structures, to name a few. Here, SAG of β-Ga2O3 using metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire followed by HF lift-off was demonstrated. Post-HF etching combined with ultrasonication achieved complete removal of the mask and expose the regrown pattern. An (AlxGa1-x)2O3 capping layer is found to be highly effective in reducing the etching damage of the surface during the manufacturing process.

M3 - Conference Paper

T2 - 2023 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2023 - Orlando, FL, United States

Y2 - 15 May 2023 through 18 May 2023

ER -