Self-consistent modeling of microwave activated N2/CH4/H2 (and N2/H2) plasmas relevant to diamond chemical vapour deposition

Michael N R Ashfold*, Yuri A Mankelevich*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

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Abstract

The growth rate of diamond by chemical vapour deposition (CVD) from microwave (MW) plasma activated CH4/H2 gas mixtures can be significantly enhanced by adding trace quantities of N2 to the process gas mixture. Reasons for this increase remain unclear. The present article reports new, self-consistent two-dimensional modelling of MW activated N2/H2 and N2/CH4/H2 plasmas operating at pressures and powers relevant to contemporary diamond CVD, the results of which are compared and tensioned against available experimental data. The enhanced N/C/H plasma chemical modelling reveals the very limited reactivity of N2 under typical processing conditions and the dominance of N atoms amongst the dilute 'soup' of potentially reactive N-containing species incident on the growing diamond surface. Ways in which these various N-containing species may enhance growth rates are also discussed.
Original languageEnglish
Article number035005
Number of pages22
JournalPlasma Sources Science and Technology
Volume31
Issue number3
Early online date7 Dec 2021
DOIs
Publication statusPublished - 7 Mar 2022

Bibliographical note

Funding Information:
MNRA is grateful to many past research group members who helped in gathering the experimental data against which the current self-consistent 2D model outputs are tensioned. YuAM acknowledges support from RFBR for Grant No. 19-08-01250. The work was performed within the Cooperation in Science and Technology Agreement between Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, and the University of Bristol.

Publisher Copyright:
© 2022 The Author(s). Published by IOP Publishing Ltd.

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