Abstract
β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.
Original language | English |
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Pages (from-to) | 204-211 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 67 |
Issue number | 1 |
DOIs | |
Publication status | Published - 22 Nov 2019 |
Bibliographical note
The acceptance date for this record is provisional and based upon the month of publication for the article.Structured keywords
- CDTR
Keywords
- Channel temperature
- gallium oxide
- MOSFET
- pulsed I-V measurements