Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography

Nicholas A. Blumenschein*, Neil A. Moser, Eric R. Heller, Nicholas C. Miller, Andrew J. Green, Andreas Popp, Antonio Crespo, Kevin Leedy, Miles Lindquist, Taylor Moule, Stefano Dalcanale, Elisha Mercado, Manikant Singh, James W. Pomeroy, Martin Kuball, Gunter Wagner, Tania Paskova, John F. Muth, Kelson D. Chabak, Gregg H. Jessen

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)

Abstract

β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.
Original languageEnglish
Pages (from-to)204-211
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume67
Issue number1
DOIs
Publication statusPublished - 22 Nov 2019

Bibliographical note

The acceptance date for this record is provisional and based upon the month of publication for the article.

Structured keywords

  • CDTR

Keywords

  • Channel temperature
  • gallium oxide
  • MOSFET
  • pulsed I-V measurements

Fingerprint Dive into the research topics of 'Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography'. Together they form a unique fingerprint.

Cite this