Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography

Nicholas A. Blumenschein; Neil A. Moser; Eric R. Heller; Nicholas C. Miller; Andrew J. Green; Andreas Popp; Antonio Crespo; Kevin Leedy; Miles Lindquist; Taylor Moule; Stefano Dalcanale; Elisha Mercado; Manikant Singh; James W. Pomeroy; Martin Kuball; Gunter Wagner; Tania Paskova; John F. Muth; Kelson D. Chabak; Gregg H. Jessen

doi:10.1109/TED.2019.2951502

Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography

Nicholas A. Blumenschein^*, Neil A. Moser, Eric R. Heller, Nicholas C. Miller, Andrew J. Green, Andreas Popp, Antonio Crespo, Kevin Leedy, Miles Lindquist, Taylor Moule, Stefano Dalcanale, Elisha Mercado, Manikant Singh, James W. Pomeroy, Martin Kuball, Gunter Wagner, Tania Paskova, John F. Muth, Kelson D. Chabak, Gregg H. Jessen

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.

Original language	English
Pages (from-to)	204-211
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	1
DOIs	https://doi.org/10.1109/TED.2019.2951502
Publication status	Published - 22 Nov 2019

Bibliographical note

The acceptance date for this record is provisional and based upon the month of publication for the article.

Research Groups and Themes

CDTR

Keywords

Channel temperature
gallium oxide
MOSFET
pulsed I-V measurements

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Blumenschein, N. A., Moser, N. A., Heller, E. R., Miller, N. C., Green, A. J., Popp, A., Crespo, A., Leedy, K., Lindquist, M., Moule, T., Dalcanale, S., Mercado, E., Singh, M., Pomeroy, J. W., Kuball, M., Wagner, G., Paskova, T., Muth, J. F., Chabak, K. D., & Jessen, G. H. (2019). Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography. IEEE Transactions on Electron Devices, 67(1), 204-211. https://doi.org/10.1109/TED.2019.2951502

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title = "Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography",

abstract = "β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.",

keywords = "Channel temperature, gallium oxide, MOSFET, pulsed I-V measurements",

author = "Blumenschein, {Nicholas A.} and Moser, {Neil A.} and Heller, {Eric R.} and Miller, {Nicholas C.} and Green, {Andrew J.} and Andreas Popp and Antonio Crespo and Kevin Leedy and Miles Lindquist and Taylor Moule and Stefano Dalcanale and Elisha Mercado and Manikant Singh and Pomeroy, {James W.} and Martin Kuball and Gunter Wagner and Tania Paskova and Muth, {John F.} and Chabak, {Kelson D.} and Jessen, {Gregg H.}",

note = "The acceptance date for this record is provisional and based upon the month of publication for the article. ",

year = "2019",

month = nov,

day = "22",

doi = "10.1109/TED.2019.2951502",

language = "English",

volume = "67",

pages = "204--211",

journal = "IEEE Transactions on Electron Devices",

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Blumenschein, NA, Moser, NA, Heller, ER, Miller, NC, Green, AJ, Popp, A, Crespo, A, Leedy, K, Lindquist, M, Moule, T, Dalcanale, S, Mercado, E, Singh, M, Pomeroy, JW , Kuball, M, Wagner, G, Paskova, T, Muth, JF, Chabak, KD & Jessen, GH 2019, 'Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography', IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 204-211. https://doi.org/10.1109/TED.2019.2951502

TY - JOUR

T1 - Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography

AU - Blumenschein, Nicholas A.

AU - Moser, Neil A.

AU - Heller, Eric R.

AU - Miller, Nicholas C.

AU - Green, Andrew J.

AU - Popp, Andreas

AU - Crespo, Antonio

AU - Leedy, Kevin

AU - Lindquist, Miles

AU - Moule, Taylor

AU - Dalcanale, Stefano

AU - Mercado, Elisha

AU - Singh, Manikant

AU - Pomeroy, James W.

AU - Kuball, Martin

AU - Wagner, Gunter

AU - Paskova, Tania

AU - Muth, John F.

AU - Chabak, Kelson D.

AU - Jessen, Gregg H.

N1 - The acceptance date for this record is provisional and based upon the month of publication for the article.

PY - 2019/11/22

Y1 - 2019/11/22

N2 - β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.

AB - β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.

KW - Channel temperature

KW - gallium oxide

KW - MOSFET

KW - pulsed I-V measurements

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U2 - 10.1109/TED.2019.2951502

DO - 10.1109/TED.2019.2951502

M3 - Article (Academic Journal)

AN - SCOPUS:85077780908

SN - 0018-9383

VL - 67

SP - 204

EP - 211

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography

Abstract

Bibliographical note

Research Groups and Themes

Keywords

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