Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

A Chitnis, J Sun, V Mandavilli, R Pachipulusu, S Wu, M Gaevski, V Adivarahan, JP Zhang, MA Khan, A Sarua, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

122 Citations (Scopus)

Abstract

We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.
Translated title of the contributionSelf-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
Original languageEnglish
Pages (from-to)3491 - 3493
Number of pages3
JournalApplied Physics Letters
Volume81
DOIs
Publication statusPublished - Sep 2002

Bibliographical note

Publisher: Amer. Inst. Physics

Structured keywords

  • CDTR

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