Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

A Chitnis; J Sun; V Mandavilli; R Pachipulusu; S Wu; M Gaevski; V Adivarahan; JP Zhang; MA Khan; A Sarua; M Kuball

doi:10.1063/1.1518155

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

A Chitnis, J Sun, V Mandavilli, R Pachipulusu, S Wu, M Gaevski, V Adivarahan, JP Zhang, MA Khan, A Sarua, M Kuball

School of Physics

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133 Citations (Scopus)

Abstract

We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.

Translated title of the contribution	Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
Original language	English
Pages (from-to)	3491 - 3493
Number of pages	3
Journal	Applied Physics Letters
Volume	81
DOIs	https://doi.org/10.1063/1.1518155
Publication status	Published - Sept 2002

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Publisher: Amer. Inst. Physics

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@article{11aad108cae14252b6084108ba172ab0,

title = "Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm",

abstract = "We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.",

author = "A Chitnis and J Sun and V Mandavilli and R Pachipulusu and S Wu and M Gaevski and V Adivarahan and JP Zhang and MA Khan and A Sarua and M Kuball",

note = "Publisher: Amer. Inst. Physics",

year = "2002",

month = sep,

doi = "10.1063/1.1518155",

language = "English",

volume = "81",

pages = "3491 -- 3493",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

AU - Chitnis, A

AU - Sun, J

AU - Mandavilli, V

AU - Pachipulusu, R

AU - Wu, S

AU - Gaevski, M

AU - Adivarahan, V

AU - Zhang, JP

AU - Khan, MA

AU - Sarua, A

AU - Kuball, M

N1 - Publisher: Amer. Inst. Physics

PY - 2002/9

Y1 - 2002/9

N2 - We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.

AB - We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70C at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement.

U2 - 10.1063/1.1518155

DO - 10.1063/1.1518155

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 81

SP - 3491

EP - 3493

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

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