Abstract
We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1µm spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.
Translated title of the contribution | Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs |
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Original language | English |
Pages (from-to) | L9.7 |
Journal | Material Research Society Symposium Proceedings |
Volume | 743 |
Issue number | Symposium L – GaN and Related Alloys |
Publication status | Published - 2003 |
Bibliographical note
ISBN: 1558997792Publisher: Materials Research Society
Name and Venue of Conference: Materials Research Society Fall 2002, Boston
Conference Organiser: Materials Research Society
Structured keywords
- CDTR