Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

M Kuball; S Rajasingam; A Sarua; MJ Uren; T Martin; RS Balmer; KP Hilton

Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

M Kuball, S Rajasingam, A Sarua, MJ Uren, T Martin, RS Balmer, KP Hilton

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1Âµm spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

Translated title of the contribution	Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs
Original language	English
Pages (from-to)	L9.7
Journal	Material Research Society Symposium Proceedings
Volume	743
Issue number	Symposium L – GaN and Related Alloys
Publication status	Published - 2003

Bibliographical note

ISBN: 1558997792
Publisher: Materials Research Society
Name and Venue of Conference: Materials Research Society Fall 2002, Boston
Conference Organiser: Materials Research Society

Structured keywords

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Cite this

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title = "Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs",

abstract = "We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1{\^A}µm spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.",

author = "M Kuball and S Rajasingam and A Sarua and MJ Uren and T Martin and RS Balmer and KP Hilton",

note = "ISBN: 1558997792 Publisher: Materials Research Society Name and Venue of Conference: Materials Research Society Fall 2002, Boston Conference Organiser: Materials Research Society",

year = "2003",

language = "English",

volume = "743",

pages = "L9.7",

journal = "Material Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

number = "Symposium L – GaN and Related Alloys",

}

TY - JOUR

T1 - Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

AU - Kuball, M

AU - Rajasingam, S

AU - Sarua, A

AU - Uren, MJ

AU - Martin, T

AU - Balmer, RS

AU - Hilton, KP

N1 - ISBN: 1558997792 Publisher: Materials Research Society Name and Venue of Conference: Materials Research Society Fall 2002, Boston Conference Organiser: Materials Research Society

PY - 2003

Y1 - 2003

N2 - We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1Âµm spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

AB - We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1Âµm spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

M3 - Article (Academic Journal)

VL - 743

SP - L9.7

JO - Material Research Society Symposium Proceedings

JF - Material Research Society Symposium Proceedings

SN - 0272-9172

IS - Symposium L – GaN and Related Alloys

ER -

Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

Abstract

Bibliographical note

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