Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

M Kuball, S Rajasingam, A Sarua, MJ Uren, T Martin, RS Balmer, KP Hilton

Research output: Contribution to journalArticle (Academic Journal)peer-review


We report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1µm spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.
Translated title of the contributionSelf-Heating Effects in Multi-Finger AlGaN/GaN HFETs
Original languageEnglish
Pages (from-to)L9.7
JournalMaterial Research Society Symposium Proceedings
Issue numberSymposium L – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

ISBN: 1558997792
Publisher: Materials Research Society
Name and Venue of Conference: Materials Research Society Fall 2002, Boston
Conference Organiser: Materials Research Society

Structured keywords

  • CDTR


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