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Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography

Research output: Contribution to journalArticle (Academic Journal)

Original languageEnglish
Pages (from-to)204-211
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume67
Issue number1
DOIs
DateAccepted/In press - 1 Nov 2019
DatePublished (current) - 22 Nov 2019

Abstract

β-Ga2O3 thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 °C-200 °C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208 °C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73 °C-mm/W. The results are supported with the experimental Raman nanothermography and thermal simulations and are in reasonable agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.

Additional information

The acceptance date for this record is provisional and based upon the month of publication for the article.

    Research areas

  • Channel temperature, gallium oxide, MOSFET, pulsed I-V measurements

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