Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation

M. Paynter*, S. Bensmida, K. A. Morris, J. P. McGeehan, M. Beach, M. Akmal, J. Lees, J. Benedikt, P. Tasker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

3 Citations (Scopus)

Abstract

This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
Pages76-79
Number of pages4
Publication statusPublished - 2012
Event7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands
Duration: 29 Oct 201230 Oct 2012

Conference

Conference7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
CountryNetherlands
CityAmsterdam
Period29/10/1230/10/12

Keywords

  • design methodology
  • power amplifiers
  • semiconductor device modelling

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    Paynter, M., Bensmida, S., Morris, K. A., McGeehan, J. P., Beach, M., Akmal, M., Lees, J., Benedikt, J., & Tasker, P. (2012). Sensitivity analysis of GaN power amplifier model parameters for switching-mode operation. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 (pp. 76-79). [6483739]