Abstract
This paper examines the effect of variations in the extrinsic parameters of GaN PA models due to process variation on the estimation of efficiency and output power. Simple measurement and modelling procedures are proposed in order to allow the full investigation of these effects which are applied to a Class-F design procedure. It was found that device process variations could reduce power amplifier efficiency by around 4% and output power by 1dB.
| Original language | English |
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| Title of host publication | European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 |
| Pages | 76-79 |
| Number of pages | 4 |
| Publication status | Published - 2012 |
| Event | 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands Duration: 29 Oct 2012 → 30 Oct 2012 |
Conference
| Conference | 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 |
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| Country/Territory | Netherlands |
| City | Amsterdam |
| Period | 29/10/12 → 30/10/12 |
Keywords
- design methodology
- power amplifiers
- semiconductor device modelling