Abstract
Baseband injection is a technique that can provide a cost-effective linearizing solution that can be combined with supply modulation techniques such as envelope tracking (ET), to minimize AM/AM distortion and potentially simplify the DSP linearization requirement and associated cost. Recently [8], a new approach for computing the baseband injection stimulus, formulated in the envelope domain, was introduced. The concept was originally demonstrated using a 10W Cree GaN-on-SiC HFET device. In this work its robustness with respect to alternative device technology is investigated using 25W Nitronex NPTB00025 GaN-on-SiC HEMT depletion-mode and a 10W, high-voltage LD-MOS, enhancement-mode devices. Its effectiveness in dealing with AM/AM distortion is confirmed.
| Original language | English |
|---|---|
| Title of host publication | 83rd ARFTG Microwave Measurement Conference: Microwave Measurements for Emerging Technologies, ARFTG 2014 |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| ISBN (Print) | 9781479944255 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 83rd ARFTG Microwave Measurement Conference: Microwave Measurements for Emerging Technologies, ARFTG 2014 - Tampa, United States Duration: 6 Jun 2014 → 6 Jun 2014 |
Conference
| Conference | 83rd ARFTG Microwave Measurement Conference: Microwave Measurements for Emerging Technologies, ARFTG 2014 |
|---|---|
| Country/Territory | United States |
| City | Tampa |
| Period | 6/06/14 → 6/06/14 |
Keywords
- Distortion
- Modulation
- Multi-tone
- Power amplifiers
- signal
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