Shaping Switching Waveforms in a 650 V GaN FET Bridge-Leg Using 6.7 GHz Active Gate Drivers

Jeremy J.O. Dalton, Jianjing Wang, Harry C.P. Dymond, Dawei Liu, Dinesh Pamunuwa, Bernard H. Stark, Neville McNeill, Simon J. Hollis

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

14 Citations (Scopus)
369 Downloads (Pure)

Abstract

The application of active gate driving to 40 V GaN FETs has previously been shown to reduce ringing and EMI-generating spectral content in the switch-node voltage waveforms. This paper, for the first time, shows active gate driving applied to 650 V GaN FETs, and the shaping of device voltages and currents during switching transients. A custom integrated active gate driver is used, which can dynamically vary its output resistance from 0.12 to 64 Ω, with a 150 ps timing resolution. At 200 V DC link and 10 A load current, a significant degree of control over the active-switch drain current and switch-node voltage is demonstrated, for both buck and boost mode operation. The current overshoot and ringing in the power waveforms due to circuit parasitics are actively reduced and the voltage oscillations in the DC link are damped. The timing of resistance sequences is shown to be critical to the success of active shaping methods, thus justifying the unparalleled 150 ps resolution of the driver. Under continuous operation and at reduced ratings of 100 V and 2 A load current the significant control of the switch node voltage and voltage spectra is also demonstrated. The switching delay is reduced, and parts of the spectrum are reduced by up to 9 dB, equivalent to the effect of tripling the gate resistance but without any reduction in the overall switching speed.

Original languageEnglish
Title of host publication2017 IEEE Applied Power Electronics Conference and Exposition (APEC 2017)
Subtitle of host publicationProceedings of a meeting held 26-30th March 2017, Tampa, FL, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1983-1989
Number of pages7
ISBN (Electronic)9781509053667
ISBN (Print)9781509053674
DOIs
Publication statusPublished - Aug 2017
Event32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States
Duration: 26 Mar 201730 Mar 2017

Publication series

Name
ISSN (Print)2470-6647

Conference

Conference32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
CountryUnited States
CityTampa
Period26/03/1730/03/17

Keywords

  • Active Gate Driver
  • Arbitrary Gate Impedance
  • Drain Current Profiling
  • Dynamic Output Resistance
  • GaN
  • Gate Voltage Profiling
  • HFET
  • Oscillation Reduction
  • Programmable Gate Resistance
  • Switch Node Voltage Profiling
  • Wide Band-gap

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