Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

C. Bell*, M. S. Bahramy, H. Murakawa, J. G. Checkelsky, R. Arita, Y. Kaneko, Y. Onose, M. Tokunaga, Y. Kohama, N. Nagaosa, Y. Tokura, H. Y. Hwang, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

29 Citations (Scopus)


Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

Original languageEnglish
Article number081109
Number of pages5
JournalPhysical Review B: Condensed Matter and Materials Physics
Issue number8
Publication statusPublished - 28 Feb 2013


  • SPIN


Dive into the research topics of 'Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI'. Together they form a unique fingerprint.

Cite this