Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

C. Bell; M. S. Bahramy; H. Murakawa; J. G. Checkelsky; R. Arita; Y. Kaneko; Y. Onose; M. Tokunaga; Y. Kohama; N. Nagaosa; Y. Tokura; H. Y. Hwang; Chris Bell

doi:10.1103/PhysRevB.87.081109

Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

C. Bell^*, M. S. Bahramy, H. Murakawa, J. G. Checkelsky, R. Arita, Y. Kaneko, Y. Onose, M. Tokunaga, Y. Kohama, N. Nagaosa, Y. Tokura, H. Y. Hwang, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

29 Citations (Scopus)

Abstract

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

Original language	English
Article number	081109
Number of pages	5
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	87
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.87.081109
Publication status	Published - 28 Feb 2013

Keywords

TOPOLOGICAL INSULATOR
SPIN

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title = "Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI",

abstract = "Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109",

keywords = "TOPOLOGICAL INSULATOR, SPIN",

author = "C. Bell and Bahramy, {M. S.} and H. Murakawa and Checkelsky, {J. G.} and R. Arita and Y. Kaneko and Y. Onose and M. Tokunaga and Y. Kohama and N. Nagaosa and Y. Tokura and Hwang, {H. Y.} and Chris Bell",

year = "2013",

month = feb,

day = "28",

doi = "10.1103/PhysRevB.87.081109",

language = "English",

volume = "87",

journal = "Physical Review B: Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society (APS)",

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TY - JOUR

T1 - Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

AU - Bell, C.

AU - Bahramy, M. S.

AU - Murakawa, H.

AU - Checkelsky, J. G.

AU - Arita, R.

AU - Kaneko, Y.

AU - Onose, Y.

AU - Tokunaga, M.

AU - Kohama, Y.

AU - Nagaosa, N.

AU - Tokura, Y.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2013/2/28

Y1 - 2013/2/28

N2 - Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

AB - Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

KW - TOPOLOGICAL INSULATOR

KW - SPIN

U2 - 10.1103/PhysRevB.87.081109

DO - 10.1103/PhysRevB.87.081109

M3 - Article (Academic Journal)

VL - 87

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 8

M1 - 081109

ER -

Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

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