Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

C. Bell; M. S. Bahramy; H. Murakawa; J. G. Checkelsky; R. Arita; Y. Kaneko; Y. Onose; M. Tokunaga; Y. Kohama; N. Nagaosa; Y. Tokura; H. Y. Hwang; Chris Bell

doi:10.1103/PhysRevB.87.081109

Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

C. Bell^*
, M. S. Bahramy
, H. Murakawa
, J. G. Checkelsky
, R. Arita
, Y. Kaneko
, Y. Onose
, M. Tokunaga
, Y. Kohama
, N. Nagaosa
, Y. Tokura
, H. Y. Hwang
, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

31 Citations (Scopus)

Abstract

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

Original language	English
Article number	081109
Number of pages	5
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	87
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.87.081109
Publication status	Published - 28 Feb 2013

Keywords

TOPOLOGICAL INSULATOR
SPIN

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Bell, C., Bahramy, M. S., Murakawa, H., Checkelsky, J. G., Arita, R., Kaneko, Y., Onose, Y., Tokunaga, M., Kohama, Y., Nagaosa, N., Tokura, Y., Hwang, H. Y., & Bell, C. (2013). Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI. Physical Review B: Condensed Matter and Materials Physics, 87(8), Article 081109. https://doi.org/10.1103/PhysRevB.87.081109

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title = "Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI",

abstract = "Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109",

keywords = "TOPOLOGICAL INSULATOR, SPIN",

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day = "28",

doi = "10.1103/PhysRevB.87.081109",

language = "English",

volume = "87",

journal = "Physical Review B: Condensed Matter and Materials Physics",

issn = "1098-0121",

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T1 - Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

AU - Bell, C.

AU - Bahramy, M. S.

AU - Murakawa, H.

AU - Checkelsky, J. G.

AU - Arita, R.

AU - Kaneko, Y.

AU - Onose, Y.

AU - Tokunaga, M.

AU - Kohama, Y.

AU - Nagaosa, N.

AU - Tokura, Y.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2013/2/28

Y1 - 2013/2/28

N2 - Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

AB - Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

KW - TOPOLOGICAL INSULATOR

KW - SPIN

U2 - 10.1103/PhysRevB.87.081109

DO - 10.1103/PhysRevB.87.081109

M3 - Article (Academic Journal)

SN - 1098-0121

VL - 87

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 8

M1 - 081109

ER -

Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

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