Silicon Nitride Metalenses for Close-to-One Numerical Aperture and Wide-Angle Visible Imaging

Zhi Bin Fan, Zeng Kai Shao, Ming Yuan Xie, Xiao Ning Pang, Wen Sheng Ruan, Fu Li Zhao, Yu Jie Chen, Si Yuan Yu, Jian Wen Dong

Research output: Contribution to journalArticle (Academic Journal)peer-review

51 Citations (Scopus)
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Silicon nitride (SiN) is one of the emerging semiconductor materials that are used in both linear and nonlinear all-optical integrated devices. Its excellent dielectric properties, high material stability, and dispersion controllability are attractive to on-chip optical communications, optical signal processing, and even imaging devices. However, a large-aperture SiN metalens with high numerical aperture (NA) is limited by the low refractive index and nanofabrication technologies, particular in the visible spectrum. Here, we experimentally realize the visible-spectrum SiN divergent metalenses by fabricating the 695-nm-thick hexagonal arrays with a minimum space of 42 nm between adjacent nanopillars. A micro-size divergent metalens with NA∼0.98 and subwavelength resolution enables objects to be shrunk as small as a single-mode fiber core. Another centimeter-size SiN divergent metalens with over half a billion nanopillars, made by using the mature CMOS-compatible fabrication process, exhibits high-quality wide-angle imaging. Our findings may open a new door for the miniaturization of optical lenses in the fields of optical fibers, microendoscopes, and smart phones, as well as the applications in all-sky telescopes, large-angle beam shaping, and near-eye imaging.

Original languageEnglish
Article number014005
Number of pages10
JournalPhysical Review Applied
Issue number1
Early online date10 Jul 2018
Publication statusPublished - Jul 2018

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