The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 /spl mu/m MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
|Translated title of the contribution||Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers|
|Pages (from-to)||80 - 82|
|Number of pages||3|
|Journal||IEE Proceedings Optoelectronics|
|Publication status||Published - Feb 2003|