Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers

JCL Yong, JM Rorison, M Othman, HD Sun, MD Dawson, KA Williams

Research output: Contribution to journalArticle (Academic Journal)peer-review

14 Citations (Scopus)

Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 /spl mu/m MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
Translated title of the contributionSimulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers
Original languageEnglish
Pages (from-to)80 - 82
Number of pages3
JournalIEE Proceedings Optoelectronics
Volume150 (1)
DOIs
Publication statusPublished - Feb 2003

Bibliographical note

Publisher: IEE

Fingerprint Dive into the research topics of 'Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers'. Together they form a unique fingerprint.

Cite this