Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers

JCL Yong; JM Rorison; M Othman; HD Sun; MD Dawson; KA Williams

doi:10.1049/ip-opt:20030048

Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers

JCL Yong, JM Rorison, M Othman, HD Sun, MD Dawson, KA Williams

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Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 /spl mu/m MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

Translated title of the contribution	Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers
Original language	English
Pages (from-to)	80 - 82
Number of pages	3
Journal	IEE Proceedings Optoelectronics
Volume	150 (1)
DOIs	https://doi.org/10.1049/ip-opt:20030048
Publication status	Published - Feb 2003

Bibliographical note

Publisher: IEE

Research Groups and Themes

Photonics and Quantum

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title = "Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers",

abstract = "The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 /spl mu/m MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.",

author = "JCL Yong and JM Rorison and M Othman and HD Sun and MD Dawson and KA Williams",

note = "Publisher: IEE",

year = "2003",

month = feb,

doi = "10.1049/ip-opt:20030048",

language = "English",

volume = "150 (1)",

pages = "80 -- 82",

journal = "IEE Proceedings Optoelectronics",

issn = "1359-7078",

publisher = "Institution of Engineering and Technology (IET)",

}

TY - JOUR

T1 - Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers

AU - Yong, JCL

AU - Rorison, JM

AU - Othman, M

AU - Sun, HD

AU - Dawson, MD

AU - Williams, KA

N1 - Publisher: IEE

PY - 2003/2

Y1 - 2003/2

N2 - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 /spl mu/m MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

AB - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 /spl mu/m MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

U2 - 10.1049/ip-opt:20030048

DO - 10.1049/ip-opt:20030048

M3 - Article (Academic Journal)

SN - 1359-7078

VL - 150 (1)

SP - 80

EP - 82

JO - IEE Proceedings Optoelectronics

JF - IEE Proceedings Optoelectronics

ER -

Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers

Abstract

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