Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs

Michael J. Uren, Stefano Dalcanale, Feiyuan Yang, Ahmed Nejim, Stephen P. Wilson, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.

Original languageEnglish
Title of host publicationCS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
PublisherCS Mantech
Pages253-256
Number of pages4
ISBN (Electronic)9781893580305
Publication statusPublished - 11 May 2020
Event2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 - Tuczon, United States
Duration: 11 May 202014 May 2020

Publication series

NameCS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020
Country/TerritoryUnited States
CityTuczon
Period11/05/2014/05/20

Bibliographical note

Publisher Copyright:
© CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.

Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.

Keywords

  • GaN
  • HEMT
  • Hopping
  • Leakage
  • Power
  • Simulation

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