Abstract
Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.
| Original language | English |
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| Title of host publication | CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers |
| Publisher | CS Mantech |
| Pages | 253-256 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781893580305 |
| Publication status | Published - 11 May 2020 |
| Event | 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 - Tuczon, United States Duration: 11 May 2020 → 14 May 2020 |
Publication series
| Name | CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers |
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Conference
| Conference | 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 |
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| Country/Territory | United States |
| City | Tuczon |
| Period | 11/05/20 → 14/05/20 |
Bibliographical note
Publisher Copyright:© CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
Keywords
- GaN
- HEMT
- Hopping
- Leakage
- Power
- Simulation