Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs

Michael J. Uren; Stefano Dalcanale; Feiyuan Yang; Ahmed Nejim; Stephen P. Wilson; Martin Kuball

Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs

Michael J. Uren, Stefano Dalcanale, Feiyuan Yang, Ahmed Nejim, Stephen P. Wilson, Martin Kuball

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

3 Citations (Scopus)

Abstract

Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.

Original language	English
Title of host publication	CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	253-256
Number of pages	4
ISBN (Electronic)	9781893580305
Publication status	Published - 11 May 2020
Event	2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 - Tuczon, United States Duration: 11 May 2020 → 14 May 2020

Publication series

Name	CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020
Country/Territory	United States
City	Tuczon
Period	11/05/20 → 14/05/20

Bibliographical note

Publisher Copyright:
© CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.

Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.

Keywords

GaN
HEMT
Hopping
Leakage
Power
Simulation

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Uren, M. J., Dalcanale, S., Yang, F., Nejim, A., Wilson, S. P., & Kuball, M. (2020). Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs. In CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 253-256). (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Uren, Michael J. ; Dalcanale, Stefano ; Yang, Feiyuan et al. / Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs. CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2020. pp. 253-256 (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

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title = "Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs",

abstract = "Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.",

keywords = "GaN, HEMT, Hopping, Leakage, Power, Simulation",

author = "Uren, \{Michael J.\} and Stefano Dalcanale and Feiyuan Yang and Ahmed Nejim and Wilson, \{Stephen P.\} and Martin Kuball",

note = "Publisher Copyright: {\textcopyright} CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 ; Conference date: 11-05-2020 Through 14-05-2020",

year = "2020",

month = may,

day = "11",

language = "English",

series = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "253--256",

booktitle = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Uren, MJ, Dalcanale, S, Yang, F, Nejim, A, Wilson, SP & Kuball, M 2020, Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs. in CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 253-256, 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020, Tuczon, United States, 11/05/20.

Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs. / Uren, Michael J.; Dalcanale, Stefano; Yang, Feiyuan et al.
CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2020. p. 253-256 (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs

AU - Uren, Michael J.

AU - Dalcanale, Stefano

AU - Yang, Feiyuan

AU - Nejim, Ahmed

AU - Wilson, Stephen P.

AU - Kuball, Martin

N1 - Publisher Copyright: © CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/5/11

Y1 - 2020/5/11

N2 - Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.

AB - Bulk induced dynamic RON in GaN-on-Si HEMTs is a serious performance limiting instability which remains a problem even in some commercially available power switching devices. Its origin is now reasonably well understood, however until now it has not been possible to simulate it using a realistic epitaxial stack. For the first time we successfully simulate the controlled suppression of bulk dynamic RON by adding a specific model for leakage along threading dislocations. This was undertaken using a commercially available standard TCAD simulator, allowing realistic device optimization in an advanced GaN HEMT design flow.

KW - GaN

KW - HEMT

KW - Hopping

KW - Leakage

KW - Power

KW - Simulation

UR - https://www.scopus.com/pages/publications/85096570429

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:85096570429

T3 - CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 253

EP - 256

BT - CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020

Y2 - 11 May 2020 through 14 May 2020

ER -

Uren MJ, Dalcanale S, Yang F, Nejim A, Wilson SP, Kuball M. Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs. In CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2020. p. 253-256. (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs

Abstract

Publication series

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Bibliographical note

Keywords

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