Simultaneous measurement of optical and RF behavior under CW and pulsed Fully Active Harmonic Load-Pull

M. A. Casbon, Tommaso Brazzini, P. J. Tasker, Michael J Uren, Martin H H Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
250 Downloads (Pure)

Abstract

Here we present a system capable of simultaneous measurements of the RF and optical behavior of on-wafer devices, permitting the complete range of Fully Active Harmonic Load-Pull techniques to be employed while either observing optical phenomena such as Electroluminescence, or applying optical stimuli for trapping investigations. Full access to the backside of the wafer is achieved, allowing measurements on devices with source coupled field plates or air bridges, which normally obscure the gate region. Electroluminescence can be observed with an ultra-low light camera or a spectrometer. The test device was a GaN on silicon carbide HFET.
Original languageEnglish
Title of host publication2016 87th ARFTG Microwave Measurement Conference (ARFTG 2016)
Subtitle of host publicationProceedings of a meeting held 27 May 2016, San Francisco, California, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781509013081
ISBN (Print)9781509013098
DOIs
Publication statusPublished - Aug 2016

Structured keywords

  • CDTR

Keywords

  • fully active harmonic load-pull
  • power amplifiers
  • Waveform Engineering

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