Abstract
Here we present a system capable of simultaneous measurements of the RF and optical behavior of on-wafer devices, permitting the complete range of Fully Active Harmonic Load-Pull techniques to be employed while either observing optical phenomena such as Electroluminescence, or applying optical stimuli for trapping investigations. Full access to the backside of the wafer is achieved, allowing measurements on devices with source coupled field plates or air bridges, which normally obscure the gate region. Electroluminescence can be observed with an ultra-low light camera or a spectrometer. The test device was a GaN on silicon carbide HFET.
| Original language | English |
|---|---|
| Title of host publication | 2016 87th ARFTG Microwave Measurement Conference (ARFTG 2016) |
| Subtitle of host publication | Proceedings of a meeting held 27 May 2016, San Francisco, California, USA |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509013081 |
| ISBN (Print) | 9781509013098 |
| DOIs | |
| Publication status | Published - Aug 2016 |
Research Groups and Themes
- CDTR
Keywords
- fully active harmonic load-pull
- power amplifiers
- Waveform Engineering
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