Abstract
Thermal interface materials are crucial to minimize the thermal resistance between a semiconductor device and a heat sink, especially for high-power electronic devices, which are susceptible to self-heating-induced failures. The effectiveness of these interface materials depends on their low thermal contact resistance coupled with high thermal conductivity. Various characterization techniques are used to determine the thermal properties of the thermal interface materials. However, their bulk or free-standing thermal properties are typically assessed rather than their thermal performance when applied as a thin layer in real application. In this study, we introduce a low-frequency range frequency domain thermoreflectance method that can measure the effective thermal conductivity and volumetric heat capacity of thermal interface materials simultaneously in situ, illustrated on silver-filled thermal interface material samples, offering a distinct advantage over traditional techniques such as ASTM D5470. Monte Carlo fitting is used to quantify the thermal conductivities and heat capacities and their uncertainties, which are compared to a more efficient least-squares method.
Original language | English |
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Pages (from-to) | 5183-5189 |
Number of pages | 7 |
Journal | ACS Applied Electronic Materials |
Volume | 6 |
Issue number | 7 |
Early online date | 27 Jun 2024 |
DOIs | |
Publication status | Published - 23 Jul 2024 |
Bibliographical note
Publisher Copyright:© 2024 The Authors. Published by American Chemical Society
Keywords
- frequency-domain thermoreflectance
- package assembly
- thermal characterization
- thermal conductivity
- thermal interface material
- thermal management
- volumetric heat capacity