Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs

Indranil Chatterjee; Balaji Narasimham; Nihaar N Mahatme; Bharat L Bhuva; Ronald D Schrimpf; Jung K Wang; Bartz Bartz; Eswara Pitta; Myron Buer

Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs

Indranil Chatterjee, Balaji Narasimham, Nihaar N Mahatme, Bharat L Bhuva, Ronald D Schrimpf, Jung K Wang, Bartz Bartz, Eswara Pitta, Myron Buer

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

39 Citations (Scopus)

Original language	English
Pages (from-to)	2761-2767
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6
Publication status	Published - 2011

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@article{3b3bd2bf4fe947a5b17d60e57d12353f,

title = "Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs",

author = "Indranil Chatterjee and Balaji Narasimham and Mahatme, {Nihaar N} and Bhuva, {Bharat L} and Schrimpf, {Ronald D} and Wang, {Jung K} and Bartz Bartz and Eswara Pitta and Myron Buer",

year = "2011",

language = "English",

volume = "58",

pages = "2761--2767",

journal = "IEEE Transactions on Nuclear Science",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "6",

}

TY - JOUR

T1 - Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs

AU - Chatterjee, Indranil

AU - Narasimham, Balaji

AU - Mahatme, Nihaar N

AU - Bhuva, Bharat L

AU - Schrimpf, Ronald D

AU - Wang, Jung K

AU - Bartz, Bartz

AU - Pitta, Eswara

AU - Buer, Myron

PY - 2011

Y1 - 2011

M3 - Article (Academic Journal)

VL - 58

SP - 2761

EP - 2767

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -