| Original language | English |
|---|---|
| Pages (from-to) | 2761-2767 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 58 |
| Issue number | 6 |
| Publication status | Published - 2011 |
Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs
Indranil Chatterjee, Balaji Narasimham, Nihaar N Mahatme, Bharat L Bhuva, Ronald D Schrimpf, Jung K Wang, Bartz Bartz, Eswara Pitta, Myron Buer
Research output: Contribution to journal › Article (Academic Journal) › peer-review
41
Citations
(Scopus)