Single-gated multiple-mode power semiconductor devices

BH Stark; PR Palmer

doi:10.1049/ic:19990594

Single-gated multiple-mode power semiconductor devices

BH Stark, PR Palmer

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour

Translated title of the contribution	Single-gated multiple-mode power semiconductor devices
Original language	English
Title of host publication	IEE Colloquium Recent Advances in Power Devices (Ref. No.1999/104)
Publisher	Institution of Engineering and Technology (IET)
Pages	4/1 - 4/4
Number of pages	4
DOIs	https://doi.org/10.1049/ic:19990594
Publication status	Published - 29 Jun 1999

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Conference Organiser: IEE

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title = "Single-gated multiple-mode power semiconductor devices",

abstract = "A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour",

author = "BH Stark and PR Palmer",

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N2 - A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour

AB - A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour

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DO - 10.1049/ic:19990594

M3 - Conference Contribution (Conference Proceeding)

SP - 4/1 - 4/4

BT - IEE Colloquium Recent Advances in Power Devices (Ref. No.1999/104)

PB - Institution of Engineering and Technology (IET)

ER -

Single-gated multiple-mode power semiconductor devices

Abstract

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