Single-gated multiple-mode power semiconductor devices

BH Stark, PR Palmer

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour
Translated title of the contributionSingle-gated multiple-mode power semiconductor devices
Original languageEnglish
Title of host publicationIEE Colloquium Recent Advances in Power Devices (Ref. No.1999/104)
PublisherInstitution of Engineering and Technology (IET)
Pages4/1 - 4/4
Number of pages4
DOIs
Publication statusPublished - 29 Jun 1999

Bibliographical note

Conference Organiser: IEE

Fingerprint Dive into the research topics of 'Single-gated multiple-mode power semiconductor devices'. Together they form a unique fingerprint.

Cite this