Translated title of the contribution | Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system |
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Original language | English |
Pages (from-to) | 120 - 128 |
Number of pages | 9 |
Journal | physica status solidi (a) |
Volume | 205 (1) |
DOIs | |
Publication status | Published - Jan 2008 |
Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system
N Vogiatzis, JM Rorison
Research output: Contribution to journal › Article (Academic Journal) › peer-review
10
Citations
(Scopus)