Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system

N Vogiatzis, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)
Translated title of the contributionSingle impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system
Original languageEnglish
Pages (from-to)120 - 128
Number of pages9
Journalphysica status solidi (a)
Volume205 (1)
DOIs
Publication statusPublished - Jan 2008

Cite this