Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system

Single impurity Anderson model and band anti-crossing in the Ga_1-x In_x N_y As_1-y material system

Research output: Contribution to journal › Article (Academic Journal) › peer-review

8 Citations (Scopus)

Translated title of the contribution	Single impurity Anderson model and band anti-crossing in the Ga_1-x In_x N_y As_1-y material system
Original language	English
Pages (from-to)	120 - 128
Number of pages	9
Journal	physica status solidi (a)
Volume	205 (1)
DOIs	https://doi.org/10.1002/pssa.200723289
Publication status	Published - Jan 2008

@article{aa440a5135a742729fb735a4efbd3357,

title = "Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system",

author = "N Vogiatzis and JM Rorison",

year = "2008",

month = jan,

doi = "10.1002/pssa.200723289",

language = "English",

volume = "205 (1)",

pages = "120 -- 128",

journal = "physica status solidi (a)",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system

AU - Vogiatzis, N

AU - Rorison, JM

PY - 2008/1

Y1 - 2008/1

U2 - 10.1002/pssa.200723289

DO - 10.1002/pssa.200723289

M3 - Article (Academic Journal)

VL - 205 (1)

SP - 120

EP - 128

JO - physica status solidi (a)

JF - physica status solidi (a)

SN - 1862-6300

ER -