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Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells: structure and device characteristics

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Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells : structure and device characteristics. / Tiwari, Devendra; Koehler, Tristan; Lin, Xianzhong; Sarua, Andrei; Harniman, Robert; Wang, Lan; Klenk, Reiner; Fermin, David J.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 3, 25.01.2017, p. 2301-2308.

Research output: Contribution to journalArticle

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Tiwari, D, Koehler, T, Lin, X, Sarua, A, Harniman, R, Wang, L, Klenk, R & Fermin, DJ 2017, 'Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells: structure and device characteristics', ACS Applied Materials and Interfaces, vol. 9, no. 3, pp. 2301-2308. https://doi.org/10.1021/acsami.6b12306

APA

Vancouver

Tiwari D, Koehler T, Lin X, Sarua A, Harniman R, Wang L et al. Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells: structure and device characteristics. ACS Applied Materials and Interfaces. 2017 Jan 25;9(3):2301-2308. https://doi.org/10.1021/acsami.6b12306

Author

Tiwari, Devendra ; Koehler, Tristan ; Lin, Xianzhong ; Sarua, Andrei ; Harniman, Robert ; Wang, Lan ; Klenk, Reiner ; Fermin, David J. / Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells : structure and device characteristics. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 3. pp. 2301-2308.

Bibtex

@article{e280d1fef978483eafebbc9a50d3a56d,
title = "Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells: structure and device characteristics",
abstract = "A single molecular precursor solution is described for the deposition of CuIn(S,Se)2 (CIS) film onto Mo coated glass substrates by spin coating followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogenous and compact 1.1 m thick CIS layer, with a MoSe2 under-layer. Atomic force microscopy reveals the presence of spherical grains between 400-450 nm, featuring surface corrugation in the range of 30 nm. Film composition is found to be in close agreement with that of the precursor solution. Diffuse reflectance spectroscopy shows a direct band gap (Eg) of 1.36 eV. Intensity and temperature dependence photoluminescence spectra show characteristic features associated with a donor-acceptor pair recombination mechanism, featuring activation energy of 34 meV. Over 85 solar cell devices with the configuration Mo/CIS/CdS/i-ZnO/Al:ZnO/Ni-Al and an total area of 0.5 cm2 were fabricated and tested. The champion cell shows a power efficiency of 3.36 {\%} with an open circuit voltage of 521 mV and short circuit current of 14 mA/cm2 under AM 1.5 illumination and an external quantum efficiency above 60{\%}. Overall variation in each of solar cell parameters remains below 10{\%} of the average value, demonstrating the remarkable homogeneity of this solution processing method. To understand the limitation of devices, the dependence of the open-circuit voltage and impedance spectra upon temperature were analyzed. The data reveal that the CuIn(S,Se)2/CdS interface is the main recombination pathway with an activation energy of 0.79 eV as well as the presence of two ‘bulk’ defect states with activation energies of 37 meV and 122 meV. We also estimated that the MoSe2 under-layer generates back contact barrier of 195 meV.",
keywords = "Solar cells, Culn(S,Se)2, Thin films, Solution processing, Recombination losses, Impedance spectroscopy",
author = "Devendra Tiwari and Tristan Koehler and Xianzhong Lin and Andrei Sarua and Robert Harniman and Lan Wang and Reiner Klenk and Fermin, {David J}",
year = "2017",
month = "1",
day = "25",
doi = "10.1021/acsami.6b12306",
language = "English",
volume = "9",
pages = "2301--2308",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "3",

}

RIS - suitable for import to EndNote

TY - JOUR

T1 - Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells

T2 - structure and device characteristics

AU - Tiwari, Devendra

AU - Koehler, Tristan

AU - Lin, Xianzhong

AU - Sarua, Andrei

AU - Harniman, Robert

AU - Wang, Lan

AU - Klenk, Reiner

AU - Fermin, David J

PY - 2017/1/25

Y1 - 2017/1/25

N2 - A single molecular precursor solution is described for the deposition of CuIn(S,Se)2 (CIS) film onto Mo coated glass substrates by spin coating followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogenous and compact 1.1 m thick CIS layer, with a MoSe2 under-layer. Atomic force microscopy reveals the presence of spherical grains between 400-450 nm, featuring surface corrugation in the range of 30 nm. Film composition is found to be in close agreement with that of the precursor solution. Diffuse reflectance spectroscopy shows a direct band gap (Eg) of 1.36 eV. Intensity and temperature dependence photoluminescence spectra show characteristic features associated with a donor-acceptor pair recombination mechanism, featuring activation energy of 34 meV. Over 85 solar cell devices with the configuration Mo/CIS/CdS/i-ZnO/Al:ZnO/Ni-Al and an total area of 0.5 cm2 were fabricated and tested. The champion cell shows a power efficiency of 3.36 % with an open circuit voltage of 521 mV and short circuit current of 14 mA/cm2 under AM 1.5 illumination and an external quantum efficiency above 60%. Overall variation in each of solar cell parameters remains below 10% of the average value, demonstrating the remarkable homogeneity of this solution processing method. To understand the limitation of devices, the dependence of the open-circuit voltage and impedance spectra upon temperature were analyzed. The data reveal that the CuIn(S,Se)2/CdS interface is the main recombination pathway with an activation energy of 0.79 eV as well as the presence of two ‘bulk’ defect states with activation energies of 37 meV and 122 meV. We also estimated that the MoSe2 under-layer generates back contact barrier of 195 meV.

AB - A single molecular precursor solution is described for the deposition of CuIn(S,Se)2 (CIS) film onto Mo coated glass substrates by spin coating followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogenous and compact 1.1 m thick CIS layer, with a MoSe2 under-layer. Atomic force microscopy reveals the presence of spherical grains between 400-450 nm, featuring surface corrugation in the range of 30 nm. Film composition is found to be in close agreement with that of the precursor solution. Diffuse reflectance spectroscopy shows a direct band gap (Eg) of 1.36 eV. Intensity and temperature dependence photoluminescence spectra show characteristic features associated with a donor-acceptor pair recombination mechanism, featuring activation energy of 34 meV. Over 85 solar cell devices with the configuration Mo/CIS/CdS/i-ZnO/Al:ZnO/Ni-Al and an total area of 0.5 cm2 were fabricated and tested. The champion cell shows a power efficiency of 3.36 % with an open circuit voltage of 521 mV and short circuit current of 14 mA/cm2 under AM 1.5 illumination and an external quantum efficiency above 60%. Overall variation in each of solar cell parameters remains below 10% of the average value, demonstrating the remarkable homogeneity of this solution processing method. To understand the limitation of devices, the dependence of the open-circuit voltage and impedance spectra upon temperature were analyzed. The data reveal that the CuIn(S,Se)2/CdS interface is the main recombination pathway with an activation energy of 0.79 eV as well as the presence of two ‘bulk’ defect states with activation energies of 37 meV and 122 meV. We also estimated that the MoSe2 under-layer generates back contact barrier of 195 meV.

KW - Solar cells

KW - Culn(S,Se)2

KW - Thin films

KW - Solution processing

KW - Recombination losses

KW - Impedance spectroscopy

U2 - 10.1021/acsami.6b12306

DO - 10.1021/acsami.6b12306

M3 - Article

VL - 9

SP - 2301

EP - 2308

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 3

ER -