Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry

B Cakmak; S Yu; RV Penty; IH White

doi:10.1117/12.379944

Smooth and anisotropic ion beam etching of InP with Ar/H₂ chemistry

B Cakmak, S Yu, RV Penty, IH White

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While argon alone is used for the IBE process, the CAIBE is carried out using Ar/H2/CH4. The realization of CAIBE in Ar/H2 atmosphere is also achieved. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry. The etch rate of the InP structures is studied as a function of the Idis and the Vacc. A maximum etch rate of 700 is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al2O3 and titanium in the case of CAIBE mode. The most anisotropic structure of 83° is achieved by using the Ti mask

Translated title of the contribution	Smooth and anisotropic ion beam etching of InP with Ar/H₂ chemistry
Original language	English
Title of host publication	Integrated Optics Devices IV (IOD-IV), San Jose
Publisher	Society of Photo-Optical Instrumentation Engineers (SPIE)
Pages	139 - 146
Number of pages	8
DOIs	https://doi.org/10.1117/12.379944
Publication status	Published - 25 Jan 2000

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@inproceedings{510cfb96fe69475692288ee9ffaf517d,

title = "Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry",

abstract = "Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While argon alone is used for the IBE process, the CAIBE is carried out using Ar/H2/CH4. The realization of CAIBE in Ar/H2 atmosphere is also achieved. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry. The etch rate of the InP structures is studied as a function of the Idis and the Vacc. A maximum etch rate of 700 is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al2O3 and titanium in the case of CAIBE mode. The most anisotropic structure of 83° is achieved by using the Ti mask",

author = "B Cakmak and S Yu and RV Penty and IH White",

year = "2000",

month = jan,

day = "25",

doi = "10.1117/12.379944",

language = "English",

pages = "139 -- 146",

booktitle = "Integrated Optics Devices IV (IOD-IV), San Jose",

publisher = "Society of Photo-Optical Instrumentation Engineers (SPIE)",

address = "United States",

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TY - GEN

T1 - Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry

AU - Cakmak, B

AU - Yu, S

AU - Penty, RV

AU - White, IH

PY - 2000/1/25

Y1 - 2000/1/25

N2 - Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While argon alone is used for the IBE process, the CAIBE is carried out using Ar/H2/CH4. The realization of CAIBE in Ar/H2 atmosphere is also achieved. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry. The etch rate of the InP structures is studied as a function of the Idis and the Vacc. A maximum etch rate of 700 is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al2O3 and titanium in the case of CAIBE mode. The most anisotropic structure of 83° is achieved by using the Ti mask

AB - Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While argon alone is used for the IBE process, the CAIBE is carried out using Ar/H2/CH4. The realization of CAIBE in Ar/H2 atmosphere is also achieved. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry. The etch rate of the InP structures is studied as a function of the Idis and the Vacc. A maximum etch rate of 700 is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al2O3 and titanium in the case of CAIBE mode. The most anisotropic structure of 83° is achieved by using the Ti mask

U2 - 10.1117/12.379944

DO - 10.1117/12.379944

M3 - Conference Contribution (Conference Proceeding)

SP - 139

EP - 146

BT - Integrated Optics Devices IV (IOD-IV), San Jose

PB - Society of Photo-Optical Instrumentation Engineers (SPIE)