Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry

B Cakmak, S Yu, RV Penty, IH White

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While argon alone is used for the IBE process, the CAIBE is carried out using Ar/H2/CH4. The realization of CAIBE in Ar/H2 atmosphere is also achieved. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry. The etch rate of the InP structures is studied as a function of the Idis and the Vacc. A maximum etch rate of 700 is observed for 1.75 kV acceleration voltage and 45 mA discharge current at 30° ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al2O3 and titanium in the case of CAIBE mode. The most anisotropic structure of 83° is achieved by using the Ti mask
Translated title of the contributionSmooth and anisotropic ion beam etching of InP with Ar/H2 chemistry
Original languageEnglish
Title of host publicationIntegrated Optics Devices IV (IOD-IV), San Jose
PublisherSociety of Photo-Optical Instrumentation Engineers (SPIE)
Pages139 - 146
Number of pages8
DOIs
Publication statusPublished - 25 Jan 2000

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