Solution of the Boltzmann equation for the electron Hall mobility in Ga 1-xN xAs

Chemistry

• Boltzmann Equation 100%
• Conduction Band 75%
• Scattering 50%
• Nitrogen 50%
• Nitride 50%
• Procedure 37%
• Compound Mobility 37%
• Electron Particle 25%
• Energy 25%
• Impurity 25%
• Electron Mobility 25%
• Application 12%
• Concentration 12%
• Semiconductor 12%
• Device 12%
• Wavelength 12%
• Aqueous Solution 12%
• Optical Phonon 12%
• Band Gap 12%
• Reduction 12%
• Piezoelectricity 12%
• Effective Mass 12%
• Ambient Reaction Temperature 12%
• Exact Solutions 12%
• Electronic Band Structure 12%
• Density of State 12%
• Inelastic Scattering 12%
• Acoustic Phonon 12%

Physics

• Nitride 50%
• Nitrogen 50%
• Relaxation Time 50%
• Scattering 50%
• Model 37%
• Mobility 37%
• Approximation 37%
• Value 25%
• Calculation 25%
• Impurities 25%
• Optoelectronics 25%
• Electron Mobility 25%
• Utilization 12%
• Magnitude 12%
• Theoretical Model 12%
• Semiconductor 12%
• Fabrication 12%
• Semiconductor Laser 12%
• Isolation 12%
• Room Temperature 12%
• Piezoelectricity 12%
• Solar Cell 12%
• Inelastic Scattering 12%

Material Science

• Hall Mobility 37%
• Dispersion 25%
• Impurity 25%
• Electron Mobility 25%
• Solution 12%
• Semiconductor Material 12%
• Material 12%
• III-V Semiconductor 12%
• Carrier Transport 12%