Spatial distribution of vacancy type defects in doped GaAs and quenched SI GaAs

MA Alam, DTJ Hurle

Research output: Book/ReportCommissioned report

Translated title of the contributionSpatial distribution of vacancy type defects in doped GaAs and quenched SI GaAs
Original languageEnglish
PublisherPublisher unknown
Number of pages8
Publication statusPublished - 1991

Bibliographical note

Other identifier: RU041-008(2)
Other: # MOD - Appl Phys & Mat Res Rep RU041-008(2)

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