Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

HD Sun, AH Clark, S Calvez, MD Dawson, YN Qiu, JM Rorison, KS Kim, YJ Park

Research output: Contribution to journalArticle (Academic Journal)

3 Citations (Scopus)

Abstract

We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum
Translated title of the contributionSpectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy
Original languageEnglish
Pages (from-to)92106-1 - 92106-3
Number of pages3
JournalApplied Physics Letters
Volume86 (9)
DOIs
Publication statusPublished - Feb 2005

Bibliographical note

Publisher: AIP

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