Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

HD Sun; AH Clark; S Calvez; MD Dawson; YN Qiu; JM Rorison; KS Kim; YJ Park

doi:10.1063/1.1868866

Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

HD Sun, AH Clark, S Calvez, MD Dawson, YN Qiu, JM Rorison, KS Kim, YJ Park

Research output: Contribution to journal › Article (Academic Journal)

3 Citations (Scopus)

Abstract

We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum

Translated title of the contribution	Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy
Original language	English
Pages (from-to)	92106-1 - 92106-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86 (9)
DOIs	https://doi.org/10.1063/1.1868866
Publication status	Published - Feb 2005

Bibliographical note

Publisher: AIP

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10.1063/1.1868866

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@article{f6ce02b5436142769af082e869062d16,

title = "Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy",

abstract = "We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum",

author = "HD Sun and AH Clark and S Calvez and MD Dawson and YN Qiu and JM Rorison and KS Kim and YJ Park",

note = "Publisher: AIP",

year = "2005",

month = feb,

doi = "10.1063/1.1868866",

language = "English",

volume = "86 (9)",

pages = "92106--1 -- 92106--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

AU - Sun, HD

AU - Clark, AH

AU - Calvez, S

AU - Dawson, MD

AU - Qiu, YN

AU - Rorison, JM

AU - Kim, KS

AU - Park, YJ

N1 - Publisher: AIP

PY - 2005/2

Y1 - 2005/2

N2 - We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum

AB - We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum

U2 - 10.1063/1.1868866

DO - 10.1063/1.1868866

M3 - Article (Academic Journal)

VL - 86 (9)

SP - 92106-1 - 92106-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -