Abstract
We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum
Translated title of the contribution | Spectroscopic characterization of 1.3 μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy |
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Original language | English |
Pages (from-to) | 92106-1 - 92106-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 (9) |
DOIs | |
Publication status | Published - Feb 2005 |